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UT3409 P-CHANNEL MOSFET

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Description

UNISONIC TECHNOLOGIES CO., LTD UT3409 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR * .
The UTC UT3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

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Datasheet Specifications

Part number
UT3409
Manufacturer
UTC
File Size
180.12 KB
Datasheet
UT3409-UTC.pdf
Description
P-CHANNEL MOSFET

Features

* SOT-23-3/SOT-23 RDS(ON) ≤ 130 mΩ @ VGS=-10V, ID=-2.6A RDS(ON) ≤ 200 mΩ @ VGS =-4.5V, ID=-2.0A
* SOT-323 RDS(ON) ≤ 160 mΩ @ VGS=-10V, ID=-2.6A RDS(ON) ≤ 260 mΩ @ VGS =-4.5V, ID=-2.0A
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified

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