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UT4232 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The UT4232 uses UTC advanced technology to provide excellent RDS(ON), low gate charge and to be operated with low gate voltages.

This device is suitable for applications, such as high-side DC/DC conversion, notebook and sever.

Key Features

  • ES.
  • VDS(V)=30V.
  • ID=7A (VGS = 10V).
  • RDS(ON).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UT4232 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UT4232 uses UTC advanced technology to provide excellent RDS(ON), low gate charge and to be operated with low gate voltages. This device is suitable for applications, such as high-side DC/DC conversion, notebook and sever. „ FEATURES * VDS(V)=30V * ID=7A (VGS = 10V) * RDS(ON)<22mΩ@VGS=10V * RDS(ON)<32mΩ@VGS=4.5V * Halogen Free „ SYMBOL „ ORDERING INFORMATION Ordering Number UT4232G-S08-R Package SOP-8 Packing Tape Reel www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-337.a Free Datasheet http://www.datasheet4u.com/ UT4232 „ PIN CONFIGURATION Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.