UTP2012Z 60V PNP TRANSISTOR

UTC

Description

UNISONIC TECHNOLOGIES CO., LTD UTP2012Z Preliminary PNP EPITAXIAL SILICON TRANSISTOR 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR * DESCRIP.
The UTP2012Z is an PNP low VCE(SAT) Breakthrough In Small Signal (BISS) transistor in a medium power. FEATURES.

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Datasheet Specifications

Part number: UTP2012Z
Manufacturer: UTC
File Size: 219.85 KB
Datasheet: UTP2012Z-UTC.pdf
Description: 60V PNP TRANSISTOR

Features

* Very low collector-emitter saturation voltage VCE(SAT)
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High energy efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than for conventional t

UTP2012Z Distributors

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UTP2012Z 60V PNP TRANSISTOR UTC

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