3N70 Datasheet, Mosfet, Unisonic Technologies

3N70 Features

• Mosfet
• RDS(ON) ≤4.0Ω @VGS = 10 V
• Ultra low gate charge ( typical 10 nC )
• Low reverse transfer capacitance
• Fast switching capability
• Avalanche

PDF File Details

Part number:

3N70

Manufacturer:

Unisonic Technologies

File Size:

329.55kb

Download:

📄 Datasheet

Description:

700 volts n-channel power mosfet. Power MOSFET The UTC 3N70 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast s

3N70 Application

• Applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
• FEATURES
• RDS(ON)

TAGS

3N70

Unisonic Technologies

📁 Related Datasheet

3N70A - 700 VOLTS N-CHANNEL POWER MOSFET (Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 3N70A 700V, 3A N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET The UTC 3N70A is a high voltage and high current pow.

3N70K - 700 VOLTS N-CHANNEL POWER MOSFET (Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 3N70K 3A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET The UTC 3N70K is a high voltage and high current pow.

3N70K-MK - N-CHANNEL POWER MOSFET (Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 3N70K-MK Preliminary 3A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N70K-MK is a high voltage and high curr.

3N75 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID=3.0A@ TC=25℃ ·Drain Source Voltage- : VDSS= 750V(Min) ·Static Drain-Source On-Resistance .

3N100E - MTB3N100E (Motorola)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB3N100E/D Designer's TMOS E-FET .™ High Energy Power FET D 2 PAK for Surface Mount .

3N1012 - Power-Transistor (Infineon)
OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating t.

3N10L26 - Power-Transistor (Infineon)
OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating t.

3N120-E3 - 1200V N-CHANNEL POWER MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 3N120-E3 Preliminary 3.0A, 1200V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N120-E3 provide excellent RDS(ON), l.

3N124 - N-channel Transistor (ETC)
3N 124 (SILICON) 3N125 3N126 N-:channel silicon annular tetrode-connected fieldeffect transistors, designed for low-power switching and amplifier app.

3N125 - N-channel Transistor (ETC)
3N 124 (SILICON) 3N125 3N126 N-:channel silicon annular tetrode-connected fieldeffect transistors, designed for low-power switching and amplifier app.