Datasheet4U Logo Datasheet4U.com

3N70

700 VOLTS N-CHANNEL POWER MOSFET

3N70 Features

* RDS(ON) ≤4.0Ω @VGS = 10 V

* Ultra low gate charge ( typical 10 nC )

* Low reverse transfer capacitance

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

* SYMBOL 2.Drain www.DataSheet.net/ 1.Gate 3.Source

3N70 General Description

Power MOSFET The UTC 3N70 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app.

3N70 Datasheet (329.55 KB)

Preview of 3N70 PDF

Datasheet Details

Part number:

3N70

Manufacturer:

Unisonic Technologies

File Size:

329.55 KB

Description:

700 volts n-channel power mosfet.

📁 Related Datasheet

3N70A - 700 VOLTS N-CHANNEL POWER MOSFET (Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 3N70A 700V, 3A N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET The UTC 3N70A is a high voltage and high current pow.

3N70K - 700 VOLTS N-CHANNEL POWER MOSFET (Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 3N70K 3A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET The UTC 3N70K is a high voltage and high current pow.

3N70K-MK - N-CHANNEL POWER MOSFET (Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 3N70K-MK Preliminary 3A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N70K-MK is a high voltage and high curr.

3N75 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID=3.0A@ TC=25℃ ·Drain Source Voltage- : VDSS= 750V(Min) ·Static Drain-Source On-Resistance .

3N100E - MTB3N100E (Motorola)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB3N100E/D Designer's TMOS E-FET .™ High Energy Power FET D 2 PAK for Surface Mount .

3N1012 - Power-Transistor (Infineon)
OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating t.

3N10L26 - Power-Transistor (Infineon)
OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating t.

3N120-E3 - 1200V N-CHANNEL POWER MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 3N120-E3 Preliminary 3.0A, 1200V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N120-E3 provide excellent RDS(ON), l.

TAGS

3N70 700 VOLTS N-CHANNEL POWER MOSFET Unisonic Technologies

Image Gallery

3N70 Datasheet Preview Page 2 3N70 Datasheet Preview Page 3

3N70 Distributor