3N80
Unisonic Technologies
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N-channel mosfet. The UTC 3N80 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a lo
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3N80 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Current ID=3.0A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 800V(Min) ·Static Drain-Source On-Resistance
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3N80 - N-Channel Power MOSFET
(nELL)
SEMICONDUCTOR
3N80 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
DESCRIPTION
(3A, 800Volts)
The Nell 3N80 is a three-terminal .
3N80A - SSS3N80A
(Samsung semiconductor)
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3N80C - FQP3N80C
(Fairchild Semiconductor)
FQP3N80C / FQPF3N80C — N-Channel QFET® MOSFET
FQP3N80C / FQPF3N80C
N-Channel QFET® MOSFET
800 V, 3.0 A, 4.8
Features
• 3.0 A, 800 V, RDS(on) = 4.8 .
3N80Z - N-CHANNEL MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD 3N80Z
3A, 800V N-CHANNEL POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC 3N80Z provide excellent RDS(ON), low gate ch.
3N81 - (3N8x) Silicon Controlled Switches
(Micro Electronics)
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3N82 - (3N8x) Silicon Controlled Switches
(Micro Electronics)
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3N83 - (3N8x) Silicon Controlled Switches
(Micro Electronics)
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3N100E - MTB3N100E
(Motorola)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB3N100E/D
Designer's
TMOS E-FET .™ High Energy Power FET D 2 PAK for Surface Mount .
3N1012 - Power-Transistor
(Infineon)
OptiMOS®-T Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating t.
