4NM65-U2 Datasheet, Mosfet, Unisonic Technologies

4NM65-U2 Features

  • Mosfet
  • RDS(ON) < 2.1Ω @ VGS =10V, ID = 2.0 A
  • Fast Switching Capability
  • Improved dv/dt Capability, High Ruggedness
  • SYMBOL Power MOSFET
  • ORDERI

PDF File Details

Part number:

4NM65-U2

Manufacturer:

Unisonic Technologies

File Size:

373.22kb

Download:

📄 Datasheet

Description:

N-channel power mosfet. The UTC 4NM65-U2 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, lo

Datasheet Preview: 4NM65-U2 📥 Download PDF (373.22kb)
Page 2 of 4NM65-U2 Page 3 of 4NM65-U2

4NM65-U2 Application

  • Applications at power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
  • FEATURES
  • RDS(ON) < 2

TAGS

4NM65-U2
N-CHANNEL
POWER
MOSFET
Unisonic Technologies

📁 Related Datasheet

4NM65 - N-CHANNEL POWER MOSFET (Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 4NM65 4A, 650V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 4NM65 is a Super Junction MOSFET, designed to hav.

4NM60-U2 - N-CHANNEL SUPER-JUNCTION MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 4NM60-U2 4A, 600V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 4NM60-U2 is a Super Junction MOSFET Structure a.

4NM120 - N-CHANNEL POWER MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 4NM120 Preliminary 4.0A, 1200V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 4NM120 is a Super Junction MOS.

4NM50 - N-CHANNEL POWER MOSFET (Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 4NM50 4A, 500V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 4NM50 is a high voltage super junction MOSFET and .

4N03L02 - Power-Transistor (Infineon)
OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating .

4N041R1 - Power-Transistor (Infineon)
IPLU300N04S4-1R1 OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operatin.

4N04R7 - Power-Transistor (Infineon)
IPLU300N04S4-R7 OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating.

4N04R8 - Power-Transistor (Infineon)
IPLU300N04S4-R8 OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating.

4N0603 - N-Channel MOSFET (VBsemi)
4N0603-VB TO252 4N0603-VB TO252 Datasheet N-Channel 60 V (D-S) 175 °C MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on.

4N0607 - TO220 N-Channel MOSFET (VBsemi)
4N0607-VB TO220 4N0607-VB TO220 Datasheet N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS RDS(on) VGS = 10 V ID Configuration 60 V 5 m 120 A .

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts