6N60-P - N-CHANNEL POWER MOSFET

Unisonic Technologies

6N60-P Datasheet Preview — Preview of 6N60-P PDF

Datasheet Details

Part number	6N60-P
Manufacturer	Unisonic Technologies
File Size	264.33 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	6N60-P-UnisonicTechnologies.pdf

6N60-P Product details

Description

The UTC 6N60-P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Features

S.
RDS(ON) < 1.75Ω @ VGS = 10V, ID = 3A.
Fast switching capability.
Avalanche energy tested.
Improved dv/dt capability, high ruggedness.
SYMBOL 11 TO-220 TO-220F 11 TO-220F1 TO-220F2 1 TO-263 1 TO-251 1 TO-252.

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Published: Jan 29, 2016 |