6N60-P Datasheet - Unisonic Technologies

6N60-P - N-CHANNEL POWER MOSFET

The UTC 6N60-P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching po.

6N60-P Features

* RDS(ON) < 1.75Ω @ VGS = 10V, ID = 3A

* Fast switching capability

* Avalanche energy tested

* Improved dv/dt capability, high ruggedness

* SYMBOL 11 TO-220 TO-220F 11 TO-220F1 TO-220F2 1 TO-263 1 TO-251 1 TO-252

* ORDERING INFORMATION Ordering Number Lead Free H

6N60-P-UnisonicTechnologies.pdf