6N65Z-Q - N-CHANNEL POWER MOSFET

Unisonic Technologies

6N65Z-Q Datasheet Preview — Preview of 6N65Z-Q PDF

Datasheet Details

Part number	6N65Z-Q
Manufacturer	Unisonic Technologies
File Size	252.90 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	6N65Z-Q-UnisonicTechnologies.pdf

6N65Z-Q Product details

Description

The UTC 6N65Z-Q is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.

Features

S.
RDS(ON) = 1.85Ω @VGS = 10V, ID=3.1A.
Fast switching capability.
Avalanche energy tested.
Improved dv/dt capability, high ruggedness.
SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

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Published: Jan 29, 2016 |