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8N60-E Datasheet - Unisonic Technologies

N-CHANNEL POWER MOSFET

8N60-E Features

* RDS(ON) < 1.4Ω@VGS = 10 V

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

* SYMBOL Power MOSFET

* ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 8N60L-TF1-T 8N60G-TF1-T Pin Assignment: G: Gate

8N60-E General Description

The UTC 8N60-E is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in p.

8N60-E Datasheet (194.15 KB)

Preview of 8N60-E PDF

Datasheet Details

Part number:

8N60-E

Manufacturer:

Unisonic Technologies

File Size:

194.15 KB

Description:

N-channel power mosfet.

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8N60-E N-CHANNEL POWER MOSFET Unisonic Technologies

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