MJE13003-E NPN SILICON TRANSISTOR

Unisonic Technologies

Description

UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR * .
The UTC MJE13003-E designed for use in high. volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 2.

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Datasheet Specifications

Part number: MJE13003-E
Manufacturer: Unisonic Technologies
File Size: 302.88 KB
Datasheet: MJE13003-E-UnisonicTechnologies.pdf
Description: NPN SILICON TRANSISTOR

Features

* Collector-Emitter Sustaining Voltage: VCEO (sus)=300V.
* Collector-Emitter Saturation Voltage: VCE(sat)=1.0V(Max. ) @IC=1.0A, IB =0.25A
* Switch Time- tf =0.7μs(Max. ) @Ic=1.0A.
* ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13003L-E-x-T6S-K MJE13003G-E-x-T6S-K

Applications

* such as switching regulator’s,inverters, DC-DC converter, Motor control, Solenoid/Relay drivers and deflection circuits.

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MJE13003-E NPN SILICON TRANSISTOR Unisonic Technologies

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