QS8M11 Power MOSFET

Unisonic Technologies

Description

UNISONIC TECHNOLOGIES CO., LTD QS8M11 Preliminary DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) Power MOSFET * .
The UTC QS8M11 uses UTC’s advanced technology to provide the customers with low voltage drive, etc.

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Datasheet Specifications

Part number: QS8M11
Manufacturer: Unisonic Technologies
File Size: 208.69 KB
Datasheet: QS8M11-UnisonicTechnologies.pdf
Description: Power MOSFET

Features

* N-Channel: 30V, 3.5A RDS(ON) < 50mΩ @ VGS =10V RDS(ON) < 65mΩ @ VGS= 4.5V RDS(ON) < 70mΩ @ VGS= 4.0V
* P-Channel: -30V, -3.0A RDS(ON) < 75mΩ @ VGS= -10V RDS(ON) < 115mΩ @ VGS= -4.5V RDS(ON) < 125mΩ @ VGS= -4.0V
* Low voltage drive (4V drive)
* Low on-resistance
* SYMBOL (7

QS8M11 Distributors

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QS8M11 Power MOSFET Unisonic Technologies

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