QS8M11
Unisonic Technologies
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Power mosfet. The UTC QS8M11 uses UTC’s advanced technology to provide the customers with low voltage drive, etc. The UTC QS8M11 is suitable for sw
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QS8M11A - 4V Drive Nch+Pch MOSFET
(ROHM)
4V Drive Nch + Pch MOSFET
QS8M11A
Datasheet
Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET
Dimensions (Unit : mm)
TSMT8
(8) (7).
QS8M51 - Small Signal MOSFET
(ROHM)
QS8M51
100V Nch + Pch Small Signal MOSFET
Symbol VDSS
RDS(on)(Max.) ID PD
Tr1:Nch Tr2:Pch 100V -100V 325mΩ 470mΩ ±2A ±1.5A
1.5W
lFeatures 1) Low .
QS8888A - High Speed CMOS 16K x 4 SRAM
(Qualty Semiconductor)
.
QS8J1 - Pch+Pch MOSFET
(Rohm)
..
QS8J1
Transistors
1.5V Drive Pch+Pch MOSFET
QS8J1
zStructure Silicon P-channel MOSFET zDimensions (Unit : mm)
TSMT8
(8) (7) (6) .
QS8J11 - Middle Power MOSFET
(ROHM)
NotNeRewcDoemsimgennsded for
QS8J11
-12V Pch +Pch Middle Power MOSFET
VDSS RDS(on)(Max.)
ID PD
-12V 43mΩ ±3.5A 1.5W
lFeatures
1) Low on - resist.
QS8J2 - -12V Pch + Pch Middle Power MOSFET
(Rohm)
QS8J2
-12V Pch + Pch Middle Power MOSFET
VDSS RDS(on)(Max.)
ID PD
-12V 36mΩ ±4A 1.5W
lFeatures
1) Low on - resistance. 2) -1.5V Drive. 3) Built-i.
QS8J4 - 4V Drive Pch Pch MOSFET
(Rohm)
..
4V Drive Pch + Pch MOSFET
QS8J4
Structure Silicon P-channel MOSFET Dimensions (Unit : mm)
TSMT8
(8) (7) (6) (5)
Features 1).
QS8J5 - Pch+Pch MOSFET
(Rohm)
..
4V Drive Pch + Pch MOSFET
QS8J5
Structure Silicon P-channel MOSFET Dimensions (Unit : mm)
TSMT8
(8) (7) (6) (5)
Features 1).
QS8K13 - Small Signal MOSFET
(ROHM)
QS8K13
30V Nch+Nch Small Signal MOSFET
VDSS RDS(on)(Max.)
ID PD
30V 28mΩ ±6A 1.5W
lFeatures 1) Low on - resistance. 2) Small Surface Mount Packag.
QS8K2 - MOSFET
(Rohm)
QS8K2
30V Nch +Nch Middle Power MOSFET
VDSS RDS(on)(Max.)
ID PD
30V 54mΩ ±3.5A 1.5W
lFeatures
1) Low on - resistance. 2) Built-in G-S protection .