UF730-E Datasheet, Mosfet, Unisonic Technologies

UF730-E Features

• Mosfet
• RDS(ON)=0.85Ω@ VGS=10V, ID=3.0A
• Avalanche Energy Specified
• Rugged - SOA is Power Dissipation Limited
• Fast Switching Capability
• Linear T

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Part number:

UF730-E

Manufacturer:

Unisonic Technologies

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361.04kb

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📄 Datasheet

Description:

N-channel power mosfet. The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such a

UF730-E Application

• Applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
• FEATURES
• RDS(ON)=0.85Ω@

TAGS

UF730-E

Unisonic Technologies

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