UT2N10 - N-CHANNEL POWER MOSFET

Unisonic Technologies

UT2N10 Datasheet Preview — Preview of UT2N10 PDF

Datasheet Details

Part number	UT2N10
Manufacturer	Unisonic Technologies
File Size	697.31 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	UT2N10-UnisonicTechnologies.pdf

UT2N10 Product details

Description

The UTC UT2N10 is N-Channel enhancement mode silicon gate power FET.it uses a special gate oxide designed to provide full rated conductance at gate biases through 3V ~ 5V and facilitate true on-off power control directly from logic circuit supply voltages.

Features

S.
RDS(ON) ≤ 0.32 Ω @ VGS =10V, ID =2.0A RDS(ON) ≤ 0.38 Ω @ VGS =4.5V, ID =2.0A.
Design Optimized for 5V Gate Drives.
Can be Driven Directly from QMOS, NMOS, TTL Circuits.
SOA is Power Dissipation Limited.
Nanosecond Switching Speeds.
Linear Transfer Characteristics.
SYMBOL Drain Power MOSFET Gate Source www. unisonic. com. tw Copyright © 2022 Unisonic Technologies Co. , Ltd 1 of 9 QW-R502-511.J UT2N10.

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Published: Feb 1, 2016 |