UT2N10 N-CHANNEL POWER MOSFET

Unisonic Technologies

Description

UNISONIC TECHNOLOGIES CO., LTD UT2N10 2.0A, 100V N-CHANNEL POWER MOSFET * .
The UTC UT2N10 is N-Channel enhancement mode silicon gate power FET.

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Datasheet Specifications

Part number: UT2N10
Manufacturer: Unisonic Technologies
File Size: 697.31 KB
Datasheet: UT2N10-UnisonicTechnologies.pdf
Description: N-CHANNEL POWER MOSFET

Features

* RDS(ON) ≤ 0.32 Ω @ VGS =10V, ID =2.0A RDS(ON) ≤ 0.38 Ω @ VGS =4.5V, ID =2.0A
* Design Optimized for 5V Gate Drives
* Can be Driven Directly from QMOS, NMOS, TTL Circuits
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics

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UT2N10 N-CHANNEL POWER MOSFET Unisonic Technologies

Unisonic Technologies UT2N10-like datasheet