UT2N10

N-CHANNEL POWER MOSFET

Unisonic Technologies

UT2N10 Features

* RDS(ON) ≤ 0.32 Ω @ VGS =10V, ID =2.0A RDS(ON) ≤ 0.38 Ω @ VGS =4.5V, ID =2.0A

* Design Optimized for 5V Gate Drives

* Can be Driven Directly from QMOS, NMOS, TTL Circuits

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

UT2N10 General Description

The UTC UT2N10 is N-Channel enhancement mode silicon gate power FET.it uses a special gate oxide designed to provide full rated conductance at gate biases through 3V ~ 5V and facilitate true on-off power control directly from logic circuit supply voltages. The UTC UT2N10 is universally applied in lo.

UT2N10 Datasheet (697.31 KB)

UT2N10 Datasheet Preview — Preview of UT2N10 PDF

Datasheet Details

Part number:

UT2N10

Manufacturer:

Unisonic Technologies

File Size:

697.31 KB

Description:

N-channel power mosfet.

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UT2N10 N-CHANNEL POWER MOSFET Unisonic Technologies

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UT2N10 Features

UT2N10 General Description

Datasheet Details

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