UTC2SA1020 PNP EPITAXIAL SILICON TRANSISTOR

Unisonic Technologies

Description

UTC 2SA1020 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR .
The UTC 2SA1020 is designed for power amplifier and power switching applications. Low collector saturation voltage: VCE(sat)=-0.

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Datasheet Specifications

Part number: UTC2SA1020
Manufacturer: Unisonic Technologies
File Size: 170.99 KB
Datasheet: UTC2SA1020_UnisonicTechnologies.pdf
Description: PNP EPITAXIAL SILICON TRANSISTOR

Features

* Low collector saturation voltage: VCE(sat)=-0.5V(max. ) (IC=-1A)
* High speed switching time: tstg=1.0µs(Typ. )
* Complement to UTC 2SC2655 SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER SYMBOL VALUE -50 -50 -5 -2 0.5 1 150 -55 ~ +150 UNIT V V V A W W

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UTC2SA1020 PNP EPITAXIAL SILICON TRANSISTOR Unisonic Technologies

Unisonic Technologies UTC2SA1020-like datasheet