UT108N03 - N-CHANNEL POWER MOSFET

Unisonic Technologies

UT108N03 Datasheet Preview — Preview of UT108N03 PDF

Datasheet Details

Part number	UT108N03
Manufacturer	Unisonic Technologies
File Size	195.06 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	UT108N03-UnisonicTechnologies.pdf

UT108N03 Product details

Description

As advanced N-channel level power MOSFET, the UT108N03 is produced using UTC’s advanced trench technology, which has been specially tailored to minimize the on-resistance and maintain low gate charge for superior switching performance.

Features

RDS(ON) < 5.3mΩ @VGS = 10 V, ID = 25 A.
Low Capacitance.
Optimized Gate Charge.
Fast Switching Capability.
Avalanche Energy Specified.
SYMBOL 2.Drain 1 TO-220 1 TO-252 1 TO-251 1 TO-252D 1.Gate 3.Source.

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Published: Feb 1, 2016 |