CHA6358-99F Datasheet | United Monolithic Semiconductors

Description The CHA6358-99F is a three stages monolithic HPA that typically provides an output power of 31d Bm at 1d B gain pression associated to a high IP3 output of 38.5d Bm. It is designed for a wide range of applications, from professional to mercial munication systems The circuit is manufactured with a p HEMT process, 0.15µm gate length. It is available in chip form. Vg1a Vd1a Vg2a Vd2a Vg3a Vd3a RF in RF out Vg1b Vd1b Vg2b Vd2b Vg3b Vd3b Main Features Output power (d Bm) - Broadband performances: 27-31.5GHz - Pout: 31d Bm at 1d B pression - OIP3: 38.5d Bm - Linear gain: 22d B - DC bias: Vd=6.0Volt@Id=750m A - Chip size: 2.5x2.5x0.1mm 36 34 32 30 50 40 30 20 10 http://..net/ P-1d B Psat 29 PAE at 1d B Frequency (GHz) Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain OIP3 Output third order interception point Pout Output Power @1d B p. Min 27.0 Typ 22 38.5 31 Max 31.5 Unit GHz d B d Bm d Bm Ref. : DSCHA63583058 - 27 Feb 13 1/12 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc...