* TrenchFET® Power MOSFET
* 100 % Rg and UIS Tested
* Compliant to RoHS Directive 2011/65/EU D G S GD S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Con
114N03L
VBsemi
273.41 KB
N-channel mosfet.
114N03L-VB TO220 114N03L-VB TO220 Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) ().
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