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18T10GH N-Channel 100V MOSFET

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Description

18T10GH-VB 18T10GH-VB Datasheet N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.114 at VGS = 10 V ID (A) 1.

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Datasheet Specifications

Part number
18T10GH
Manufacturer
VBsemi
File Size
245.62 KB
Datasheet
18T10GH-VBsemi.pdf
Description
N-Channel 100V MOSFET

Features

* TrenchFET® Power MOSFET
* 150 °C Junction Temperature
* PWM Optimized
* 100 % Rg Tested

Applications

* Primary Side Switch G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Continuou

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N-Channel 100V MOSFET VBsemi
VBsemi 18T10GH-like datasheet