2SK3461-S
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N-channel mosfet.
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2SK346 - N-Channel MOSFET Transistor
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isc N-Channel MOSFET Transistor
2SK346
FEATURES ·Drain Current : ID= 5A@ TC=25℃ ·Drain Source Voltage
: VDSS= 60V(Min) ·Static Drain-Source On-Resis.
2SK346 - Silicon N-Channel MOSFET
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2SK3460 - N-Channel MOSFET
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2SK3460
Absolute Maximum Ratings
Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 150 +20, –10 ± 18 ± 72 35 (Tc = 25ºC) 180 18 150 –5.
2SK3462 - N-Channel MOSFET
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2SK3462
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)
..
2SK3462
Unit: mm
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2SK3466 - N-Channel MOSFET
(Toshiba Semiconductor)
2SK3466
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3466
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2SK3467 - SWITCHING N-CHANNEL POWER MOSFET
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3467
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3467 is N-Channel MOS FET device.
2SK3468 - N-Channel MOSFET Transistor
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isc N-Channel MOSFET Transistor
2SK3468
FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage
: VDSS= 500V(Min) ·Static Drain-Source On-Re.
2SK3468-01 - N-Channel MOSFET
(Fuji Electric)
2SK3468-01
Super FAP-G Series
Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
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2SK3469-01MR - N-Channel MOSFET
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2SK3469-01MR
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Super FAP-G Series
Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-.
2SK34 - Transistor
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