AO4900 Datasheet - VBsemi

AO4900, Dual N-Channel MOSFET

AO4900-VB AO4900-VB Datasheet Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode www.VBsemi.com PRODUCT SUMMARY VDS (V) R.

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Datasheet Details

Part number:

AO4900

Manufacturer:

VBsemi

File Size:

353.85 KB

Description:

Dual N-Channel MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* Trench Power MOSFET
* 100 % UIS Tested
* 100 % Rg Tested

Applications

* Set Top Box
* Low Current DC/DC D2 D1 K A G2 G1 S2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain CurrentA Pulsed Drain CurrentB TA=25°C TA=70°C ID IDM Schottky revers

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AO4900 Dual N-Channel MOSFET VBsemi

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