AP9575GM
FEATURES
- Trench FET® power MOSFET
- 100 % Rg and UIS tested
SO-8
S1 S2 S3 G4
8D 7D 6D 5D
Top View
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC = 25 °C ID
TC = 125 °C
Continuous Source Current (Diode Conduction)
Pulsed Drain Current a
Single Pulse Avalanche Current Single Pulse Avalanche Energy
IAS L = 0.1 m H
Maximum Power Dissipation a
TC = 25 °C PD
TC = 125 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT -60 ± 20 -8 -4.75 -4.5 -32 -22.4 25 5 1.67
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. When mounted on 1" square PCB (FR-4 material). c. Parametric verification ongoing.
PCB Mount b
SYMBOL Rth JA Rth...
