* 175 °C Junction Temperature
* TrenchFET® Power MOSFET
* Material categorization: D TO-252 www.VBsemi.com G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continu
AUFR2405 Datasheet (260.91 KB)
AUFR2405
VBsemi
260.91 KB
N-channel mosfet.
AUFR2405-VB
AUFR2405-VB Datasheet
N-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 60
RDS(on) () 0.010 at VGS = 10 V 0.013 at VGS = 4.5 V
ID .
📁 Related Datasheet
AUF1010ZL - N-Channel 60V MOSFET
(VBsemi)
AUF1010ZL-VB
AUF1010ZL-VB Datasheet N-Channel 60 V (D-S) 175 °C MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = 10 V ID (A) Confi.
AUFS3006 - N-Channel MOSFET
(VBsemi)
AUFS3006-VB
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration
AUFS3006-VB Datasheet N-Channel 60 V (D.
AUFS3306 - N-Channel MOSFET
(VBsemi)
AUFS3306-VB
AUFS3306-VB Datasheet
N-Channel 60 V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS =.
AUFS4410Z - N-Channel MOSFET
(VBsemi)
AUFS4410Z-VB
AUFS4410Z-VB Datasheet N-Channel 100 V (D-S) 175 °C MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V) 100
RDS(on) (Ω) 0.004 at VGS = 10 V.
AU01 - Fast Recovery Diode
(Sanken electric)
VRM = 400 V, IF(AV) = 0.5 A, trr = 400 ns Fast Recovery Diode
AU01
Data Sheet
Description
The AU01 is a fast recovery diode of 400 V / 0.5 A. The ma.
AU01 - FAST RECOVERY RECTIFIER DIODES
(EIC)
AU01 ~ AU01A
PRV : 200 ~ 600 Volts Io : 0.5 Ampere
FAST RECOVERY RECTIFIER DIODES
DO - 41
FEATURES :
* High current capability * High surge current .
AU01 - ZENER DIODE
(Hitachi)
ZENER DIODE
AU01
FEATURES
• For stabilized power supply. • Diffused-junction. Glass passivated and
encapsulated.
• • ガラスモールド
OUTLINE DRAWING
Unit .
AU01A - Fast Recovery Diode
(Sanken electric)
VRM = 600 V, IF(AV) = 0.5 A, trr = 400 ns Fast Recovery Diode
AU01A
Data Sheet
Description
The AU01A is a fast recovery diode of 600 V / 0.5 A. The .
