* Low Gate Charge Qg Results in Simple Drive Requirement
* Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS COMPLIANT
* Fully Characterized Capacitance and Avalanche Voltage and Current
* Compliant to RoHS directive 2002/95/EC TO-220AB D GD S
CMP4N65
VBsemi
270.72 KB
N-channel 650v mosfet.
CMP4N65-VB
CMP4N65-VB Datasheet N-Channel 650 V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) C.
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