* Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS)
* Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (FOM):
FMA16N50E Datasheet (292.68 KB)
FMA16N50E
VBsemi
292.68 KB
N-channel 550v power mosfet.
FMA16N50E-VB
FMA16N50E-VB Datasheet
N-Channel 550V (D-S) Power MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V) RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs .
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