I06N60T N-Channel 650V Power MOSFET

VBsemi

Description

I06N60T-VB I06N60T-VB Datasheet /$IBOOFM7 %4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max.RDS(on) at 25 °C (Ω) Qg max.(nC.

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Datasheet Specifications

Part number: I06N60T
Manufacturer: VBsemi
File Size: 286.54 KB
Datasheet: I06N60T-VBsemi.pdf
Description: N-Channel 650V Power MOSFET

Features

* Low figure-of-merit (FOM) Ron x Qg
* Low input capacitance (Ciss)
* Reduced switching and conduction losses
* Ultra low gate charge (Qg)

Applications

* Server and telecom power supplies
* Switch mode power supplies (SMPS)
* Power factor correction power supplies (PFC)
* Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
* Industrial TO-220 FULLPAK D GDS Top View G S N-Channel MOSFE

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I06N60T N-Channel 650V Power MOSFET VBsemi

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