J387S P-Channel MOSFET

VBsemi

Description

J387S-VB J387S-VB Datasheet P-Channel 20-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 0.016 at VGS = - 4.5 V 0.025 a.

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Datasheet Specifications

Part number: J387S
Manufacturer: VBsemi
File Size: 265.11 KB
Datasheet: J387S-VBsemi.pdf
Description: P-Channel MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET

Applications

* Load Switch
* Battery Switch GD S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain C

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J387S P-Channel MOSFET VBsemi

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