NTD110N02R-001G
FEATURES
D Trench FETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested
GDS Top View
Drain Connected to Tab
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a
Maximum Power Dissipation Operating Junction and Storage Temperature Range
TC = 25_C TC = 100_C
TC = 25_C TA = 25_C
VDS VGS
ID IDM IS
PD TJ, Tstg
20 "15 100 80 200 65 71 8.3b, c
- 55 to 175
Unit
W _C
THERMAL RESISTANCE RATINGS Parameter
Maximum Junction-to-Ambientb
Maximum Junction-to-Case Notes a. Package Limited b. Surface Mounted on 1” x 1” FR4 Board c. t v 10 sec t v 10 sec. Steady State
Symbol
Rth JA Rth JC
Typical
15 40 1.75
Maximum
18 50 2.1
Unit
_C/W
NTD110N02R-001G-VB
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test...
