P60N10 N-Channel MOSFET

VBsemi

P60N10 Description

P60N10-VB P60N10-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.017 at VGS = 10 V ID .

P60N10 Features

* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* Low Thermal Resistance Package

P60N10 Applications

* Isolated DC/DC Converters D RoHS COMPLIANT GD S Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed

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Datasheet Details

Part number: P60N10
Manufacturer: VBsemi
File Size: 216.19 KB
Datasheet: P60N10-VBsemi.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET VBsemi

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