* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* PWM Optimized
* 100 % Rg Tested
* Compliant to RoHS Directive 2002/95/EC APPLICATIONS
* Primary Side Switch GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise note
RSD050N10TL Datasheet (513.69 KB)
RSD050N10TL
VBsemi
513.69 KB
N-channel mosfet.
RSD050N10TL RSD050N10TL Datasheet
N-Channel 100 V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V) 100
RDS(on) () 0.114 at VGS = 10 V
ID (A) .
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