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SFP640 N-Channel 200V MOSFET

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Description

SFP640-VB SFP640-VB Datasheet N-Channel 200 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 200 RDS(on) () 0.110 at VGS = 10 V TO-220AB .

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Datasheet Specifications

Part number
SFP640
Manufacturer
VBsemi
File Size
254.59 KB
Datasheet
SFP640-VBsemi.pdf
Description
N-Channel 200V MOSFET

Features

* Trench Power MOSFET
* 175 °C Junction Temperature
* PWM Optimized
* 100 % Rg Tested

Applications

* Primary Side Switch DRAIN connected to TAB GD S Top View D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C ID Pul

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