SH8K1TB Dual N-Channel 30V MOSFET

VBsemi

Description

SH8K1TB-VB SH8K1TB-VB Datasheet Dual N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.022 at VGS = 10 V 30 0.026 .

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Datasheet Specifications

Part number: SH8K1TB
Manufacturer: VBsemi
File Size: 216.86 KB
Datasheet: SH8K1TB-VBsemi.pdf
Description: Dual N-Channel 30V MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* Trench Power MOSFET
* 100 % UIS Tested
* 100 % Rg Tested

Applications

* Set Top Box
* Low Current DC/DC D1 D2 G1 S1 N-Channel MOSFET G2 S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 30 V VGS ± 20 TC = 25 °C 6.8a Continuous Drain

SH8K1TB Distributors

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SH8K1TB Dual N-Channel 30V MOSFET VBsemi

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