* TrenchFET® power MOSFET
* Package with low thermal resistance
* 100 % Rg and UIS tested TO-252 S G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drai
SUD50P04-08-GE3 Datasheet (378.76 KB)
SUD50P04-08-GE3
VBsemi
378.76 KB
P-channel mosfet.
SUD50P04-08-GE3 SUD50P04-08-GE3 Datasheet
www.VBsemi.com
P-Channel 4 0 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = -10 V RDS(on) (.
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