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TE12LQM N-Channel MOSFET

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Description

TPC8020-H(TE12LQM) N-Channel 20V (D-S) MOSFET www.VBsemi.tw PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 0.012 at VGS = 10 V 0.015 at VGS = 4.5 V ID.

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Datasheet Specifications

Part number
TE12LQM
Manufacturer
VBsemi
File Size
1.67 MB
Datasheet
TE12LQM-VBsemi.pdf
Description
N-Channel MOSFET

Features

* Halogen-free
* TrenchFET® Power MOSFET
* Optimized for High-Side Synchronous Rectifier Operation
* 100 % Rg Tested

Applications

* Notebook CPU Core - High-Side Switch D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 20 VGS ± 16 V TC = 25 °C 12 Continuous Drain Current (TJ = 150 °C) TC =

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