VBA1210 N-Channel MOSFET

VBsemi

Description

VBA1210 N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.008 at VGS= 10 V 0.011 at VGS = 4.5 V ID (A)a 13 .

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Datasheet Specifications

Part number: VBA1210
Manufacturer: VBsemi
File Size: 276.03 KB
Datasheet: VBA1210-VBsemi.pdf
Description: N-Channel MOSFET

Features

* Halogen-free
* TrenchFET® Power MOSFET
* Optimized for High-Side Synchronous Rectifier Operation
* 100 % Rg Tested

Applications

* Notebook CPU Core - High-Side Switch D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ± 20 V TC = 25 °C 13 Continuous Drain Current (TJ = 150 °C) TC =

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