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VBI3328 Dual N-Channel MOSFET

VBI3328 Description

VBI3328 Dual N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.022 at VGS = 10 V 30 0.026 at VGS = 4.5 V ID (A) .

VBI3328 Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % UIS Tested
* 100 % Rg Tested

VBI3328 Applications

* Set Top Box
* Low Current DC/DC (6) (5) (4) (1) (2) (3) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain (1) (2) (3) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage

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Datasheet Details

Part number
VBI3328
Manufacturer
VBsemi
File Size
295.97 KB
Datasheet
VBI3328-VBsemi.pdf
Description
Dual N-Channel MOSFET

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