* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* PWM Optimized
* 100 % Rg Tested
* Compliant to RoHS Directive 2002/95/EC APPLICATIONS
* Primary Side Switch G GD S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless ot
VBM1201K Datasheet (835.96 KB)
VBM1201K
VBsemi
835.96 KB
N-channel mosfet.
VBM1201K N-Channel 200 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS =.
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