Optimal Design
- Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Ra
VBM1603, VBsemi
VBM1603
N-Channel 60 V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuratio.
VBM1606, VBsemi
VBM1606
N-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS RDS(on) VGS = 10 V ID Configuration
60
V
5
m
120
A
Single
FEATURES
• 175 °C Junctio.
