Datasheet Specifications
- Part number
- VBN2625
- Manufacturer
- VBsemi
- File Size
- 225.75 KB
- Datasheet
- VBN2625-VBsemi.pdf
- Description
- P-Channel MOSFET
Description
VBN2625 P-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.0160at VGS = - 10 V 0.0200 at VGS = - 4.5 V ID .
Features
* TrenchFET® Power MOSFETApplications
* Load Switch S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM AVBN2625 Distributors
📁 Related Datasheet
📌 All Tags