VBN2625 Datasheet - VBsemi

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VBN2625 P-Channel MOSFET

VBN2625 P-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.0160at VGS = - 10 V 0.0200 at VGS = - 4.5 V ID .

VBN2625-VBsemi.pdf

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Datasheet Details

Part number:

VBN2625

Manufacturer:

VBsemi

File Size:

225.75 KB

Description:

P-Channel MOSFET

Features

* TrenchFET® Power MOSFET

Applications

* Load Switch S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM A

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