VBR9N6010N Datasheet - VBsemi

VBR9N6010N, N-Channel MOSFET

VBR9N6010N N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.110 at VGS = 10 V 60 0.135 at VGS = 4.5 V ID (A)a 2.

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Datasheet Details

Part number:

VBR9N6010N

Manufacturer:

VBsemi

File Size:

220.41 KB

Description:

N-Channel MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Available
* TrenchFET® Power MOSFET
* 100 % Rg Tested

Applications

* Battery Switch
* DC/DC Converter ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current Conti

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