* Ultra Low Gate Charge
* Reduced Gate Drive Requirement
* Enhanced 30 V, VGS Rating
* Reduced Ciss, Coss, Crss
* Extremely High Frequency Operation
* Repetitive Avalanche Rated
* Compliant to RoHS Directive 2002/95/EC Available RoHS
* COMP
VBZF4N60 Datasheet (257.48 KB)
VBZF4N60
VBsemi
257.48 KB
N-channel power mosfet.
VBZF4N60 N-Channel 600V (D-S) Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 .
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