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VBZR2N7000 - N-Channel MOSFET

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Overview

VBZR2N7000 N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 2 at VGS = 10 V ID (mA) 300 TO-92 D 1 G 2 S 3 Top.

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • Low On-Resistance: 2 Ω.
  • Low Threshold: 2 V (typ. ).
  • Low Input Capacitance: 25 pF.
  • Fast Switching Speed: 25 ns.
  • Low Input and Output Leakage.
  • TrenchFET® Power MOSFET.
  • 1200V ESD Protection.
  • Compliant to RoHS Directive 2002/95/EC.

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