* Halogen-free According to IEC 61249-2-21 Definition
* Low On-Resistance: 2 Ω
* Low Threshold: 2 V (typ.)
* Low Input Capacitance: 25 pF
* Fast Switching Speed: 25 ns
* Low Input and Output Leakage
* TrenchFET® Power MOSFET
* 1200V ESD
VBZR2N7000 Datasheet (266.31 KB)
VBZR2N7000
VBsemi
266.31 KB
N-channel mosfet.
VBZR2N7000 N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 2 at VGS = 10 V ID (mA) 300 TO-92 D 1 G 2 S.
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