VBZR2N7000
Key Features
- Low On-Resistance: 2 Ω
- Low Threshold: 2 V (typ.)
- Low Input Capacitance: 25 pF
- Fast Switching Speed: 25 ns
- Low Input and Output Leakage
- TrenchFET® Power MOSFET
- 1200V ESD Protection
- pliant to RoHS Directive 2002/95/EC BENEFITS
- Low Offset Voltage
- Low-Voltage Operation
Applications
- Drivers: Relays, Solenoids, Lamps, Hammers, Display
