* Halogen-free According to IEC 61249-2-21 Definition
* Low On-Resistance: 2 Ω
* Low Threshold: 2 V (typ.)
* Low Input Capacitance: 25 pF
* Fast Switching Speed: 25 ns
* Low Input and Output Leakage
* TrenchFET® Power MOSFET
* 1200V ESD
VBZR2N7000 Datasheet (266.31 KB)
VBZR2N7000
VBsemi
266.31 KB
N-channel mosfet.
VBZR2N7000
N-Channel 60-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
60
2 at VGS = 10 V
ID (mA) 300
TO-92
D
1
G
2
S.
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