1N5819-1
Features
- Low Forward Voltage: 490 m V @ IF = 1.0 A
- Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/586
- High Reverse Breakdown Voltage: 45 V
- Hermetically Sealed Glass, DO-41 (DO-204AL) and MELF (DO-213AB)
Description
The 1N5819 silicon Schottky diode offers a large reverse breakdown voltage with low forward voltage. The die, which is passivated with an advanced high-reliability passivation for very fast settling time and low leakage current, is packaged in the industry standard DO-41 hermetically sealed axial leaded glass package as well as the surface mount DO-213AB.
This rugged device is capable of reliable operation in all space, military, mercial and industrial applications.
The 1N5819 is designed to be used in wide variety of applications, such as low voltage, high frequency inverters and reverse polarity protection.
Rev. V1
Electrical Specifications: TA = +25°C (unless otherwise specified)
Symbol
Reverse Leakage Current
Reverse Leakage Current
Reverse Leakage...
