VS3614GE
Features
- Enhancement mode
- Low RDS(on) to minimize conduction losses
- Vito MOS® Ⅱ Technolog
- 100% Avalanche Tested,100% Rg Tested
30V/31A N-Channel Advanced Power MOSFET
V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V I D(Wire bond Limited)
3.5 mΩ
5.8 mΩ
PDFN3333
Part ID VS3614GE
Package Type PDFN3333
Marking 3614GE
Packing 5000PCS/Reel
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS Drain-Source breakdown voltage
Gate-Source voltage
Diode continuous forward current
TC = 25°C
Continuous drain current @VGS=10V (Wire bond limited) TC = 25°C
Continuous drain current @VGS=10V (Wire bond limited) TC = 100°C
Pulse drain current tested ①
TC = 25°C
IDSM
Continuous drain current @VGS=10V
TA = 25°C TA = 70°C
Maximum Avalanche energy, single pulsed ②
Maximum power dissipation ③
TC = 25°C TC =...
