VS3647DB
Features
- Dual Asymmetric N-Channel
- Vito MOS® Ⅱ Technology
- 100% Avalanche Tested,100% Rg Tested
V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5V I D(Wire bond Limited)
4.9 mΩ
7.7 mΩ
DFN3x3
Part ID VS3647DB
Package Type DFN3x3
Marking 3647DB
Packing 5000pcs/Reel
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
Rating
Q1
Q2
V(BR)DSS Drain-Source breakdown voltage
Gate-Source voltage
±20
±20
Diode continuous forward current
TC =25°C
Continuous drain current @VGS=10V((Wire bond Limited)
TC =25°C
Continuous drain current @VGS=10V((Sillicon Limited)
TC =100°C
Pulse drain current tested ①
TC...
