SI4442DY Datasheet | Vishay

.. Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 r DS(on) (W) 0.0045 @ VGS = 10 V 0.005 @ VGS = 4.5 V 0.0075 @ VGS = 2.5 V ID (A) 22 19 17 SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D G Data Shee Ordering Information: Si4442DY Si4442DY-T1 (with Tape and Reel) Si4442DY- E3 (Lead Free) Si4442DY-T1- E3 (Lead Free with Tape and Reel) . S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 30 "12 22 17 60 2.9 3.5 2.2 Steady State Unit 15 11 A 1.3 1.6 1 - 55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Foot (Drain) a. Surface Mounted on 1” x 1” FR4 Board. . Document Number: 71358 S-40843- Rev. C, 03-May-04 .vishay. Notes t v 10 sec Steady State Steady State Symbol Rth JA Rth JF Typical 29 67 13 Maximum 35 80...