* Guardring for overvoltage protection
* Very small conduction losses
* Extremely fast switching
* Low forward voltage drop
* High frequency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: for definitions of
1N5819
Vishay ↗ Siliconix
68.98 KB
Schottky barrier rectifiers.
www.vishay.com
1N5817, 1N5818, 1N5819
Vishay General Semiconductor
Schottky Barrier Plastic Rectifier
DO-41 (DO-204AL)
PRIMARY CHARACTERISTICS
IF.
📁 Related Datasheet
1N5810 - DIODE
(DSI)
Technical Data DIODE
maximum ratings
Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Curren.
1N5810 - RECTIFIERS
(Solid State)
.
1N5810 - HIGH EFFICIENCY RECTIFIERS
(Digitron Semiconductors)
1N5807-1N5811
High-reliability discrete products and engineering services since 1977
HIGH EFFICIENCY RECTIFIERS
FEATURES Available as “HR” (high .
1N5810-M - DIODE
(DSI)
Technical Data DIODE
maximum ratings
Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Curren.
1N5811 - RECTIFIERS
(Solid State)
.
1N5811 - VOID-LESS HERMETICALLY SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS
(Microsemi)
1N5807, 1N5809 and 1N5811
Available on mercial
versions
VOID-LESS HERMETICALLY SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS
Qualified per MIL-PRF-1.
1N5811 - SUPERFAST RECTIFIER DIOSE
(Semtech)
RECTIFIER, up to 150V, 6A, 30ns
1N5807 1N5809 1N5811
TEL:805-498-2111 FAX:805-498- 3804 WEB:http://.semtech.
MECHANICAL
G112
Dimensions
DI.
1N5811 - Rectifier Diode
(MA-COM)
1N5807(US), 1N5809(US), 1N5811(US)
Rectifier Diode Series Ultrafast Recovery
Features
Popular JEDEC Registered Series Voidless Hermetically Seale.
