GB75DA120UP

Insulated Gate Bipolar Transistor

Vishay Siliconix

* NPT Generation V IGBT technology

* Square RBSOA

* HEXFRED® low Qrr, low switching energy

* Positive VCE(on) temperature coefficient

* Fully isolated package SOT-227

* Speed 8 kHz to 60 kHz

* Very low internal inductance ( 5 nH typical)

GB75DA120UP

244.40 KB

Insulated gate bipolar transistor.

📁 Related Datasheet

GB75YF120N IGBT FOUR PAK MODULE (International Rectifier)

GB75YF120UT IGBT Fourpack Module (Vishay Siliconix)

GB70LA60UF Warp 2 Speed IGBT (Vishay Siliconix)

GB70NA60UF Warp 2 Speed IGBT (Vishay Siliconix)

GB7NC60HD N-channel IGBT (STMicroelectronics)

GB-1A Subminiature Signal Relay (GOLDEN RELAYS)

GB-1C Subminiature Signal Relay (GOLDEN RELAYS)

GB-IRM-8751 Infrared Receiver (Lucky Light Electronic)

GB-IRM-8751-2F Infrared Receiver (Lucky Light Electronic)

GB-IRM-8751-2L Infrared Receiver (Lucky Light Electronic)

TAGS

Image Gallery