* Trench MOS Schottky technology
* Low power losses, high efficiency
* Low forward voltage drop
* High forward surge capability
* High frequency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* Material categorization: f
MBRF20100CT Datasheet (77.62 KB)
MBRF20100CT
Vishay ↗ Siliconix
77.62 KB
Dual high-voltage trench mos barrier schottky rectifier.
www.vishay.com
MBRF2090CT, MBRF20100CT
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
TMBS ®
ITO-220AB
123
.
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