* D D D D D D High-Side Switching Low On-Resistance: 1.2 W Low Threshold: 0.8 V (typ) Fast Swtiching Speed: 14 ns 1.8-V Operation Gate-Source ESD Protection BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation
SC-89
Vishay ↗ Siliconix
44.53 KB
P-channel 1.8-v (g-s) mosfet.
Si1013R/X
New Product
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
1.2 @ VGS =
*4.5 V
*20 1.6 @.
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