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SI1419DH P-Channel 200-V (D-S) MOSFET

SI1419DH Description

P-Channel 200 V (D-S) MOSFET Si1419DH Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 200 5.0 at VGS = - 10 V 5.1 at VGS = - 6 V ID (A) .

SI1419DH Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFETS
* Small, Thermally Enhanced SC-70 Package
* Ultra Low On-Resistance

SI1419DH Applications

* Active Clamp Circuits in dc-to-dc Power Supplies S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Diode

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